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GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices

1999; Institute of Physics; Volume: 38; Issue: 5A Linguagem: Inglês

10.1143/jjap.38.l508

1347-4065

Shinji Koh, Takashi Kondo, M. Ebihara, Tetsuya Ishiwada Tetsuya Ishiwada, Hidetaka Sawada, Hiroshi Maiwa, Ichiro Shoji, Ryoichi Ito,

Semiconductor Quantum Structures and Devices

Sublattice reversal epitaxy is demonstrated in lattice-matched GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed by reflection high energy electron diffraction and preferential etching. In the GaAs/Ge/GaAs (100) system, the sublattice reversal is assisted by self-annihilation of the antiphase domains generated at the GaAs/Ge interface. In the GaAs/Ge/GaAs (111) system, the sublattice reversal results from the unique structure of the As-terminated Ge (111) surfaces. The quality of the sublattice-reversed GaAs crystal is investigated using cross-sectional transmission electron microscopy. A method to fabricate a periodically domain-inverted structure using sublattice reversal epitaxy is demonstrated for the GaAs/Ge/GaAs (100) system.