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Highly Sensitive Detection of Oxygen from Si(111)7×7 Surface by Time-of-Flight-Type Electron Stimulated-Desorption Spectroscopy

1995; Institute of Physics; Volume: 34; Issue: 3R Linguagem: Inglês

10.1143/jjap.34.1648

1347-4065

Kazuyuki Ueda,

Integrated Circuits and Semiconductor Failure Analysis

In this paper we describe the experimental observation of a small amount of oxygen on silicon surfaces flashed at 1250° C with time-of-flight-type electron-stimulated desorption (TOF-ESD) spectroscopy. The TOF-ESD enables us to detect about 10 -4 of a monolayer of oxygen on a “cleaned” Si(111)7×7 surface. The amount of oxygen detected is less on the surface of silicon quenched after flashing at 1250° C than after annealing. This suggests that oxygen is accumulated on the silicon surface by thermal diffusion of SiO.