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Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC

2006; Elsevier BV; Volume: 40; Issue: 4-6 Linguagem: Inglês

10.1016/j.spmi.2006.06.006

1096-3677

Y. Cordier, Sébastien Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Sèmond, J. Massies, L. Di Cioccio, H. Moriceau,

Semiconductor materials and devices

Abstract We report on the growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs) on Si(111)/ SiO2/polySiC substrates. The structural, optical, and electrical properties of these films are studied and compared with those of heterostructures grown on thick Si(111) substrates. Field effect transistors have been realized, and they demonstrate the potentialities of III–V nitrides grown on these advanced substrates.