Transport properties of silver selenide thin films from 100 to 300 K
2002; Elsevier BV; Volume: 56; Issue: 4 Linguagem: Inglês
10.1016/s0167-577x(02)00538-4
ISSN1873-4979
AutoresM.C. Santhosh Kumar, B. Pradeep,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoThe Hall coefficient, Hall mobility and electrical conductivity of n-type low temperature phase of silver selenide (β-Ag2Se) thin films prepared by reactive evaporation have been studied from 100 to 300 K. Thermoelectric power was measured from 150 to 300 K. Hall effect study shows that it has a mobility of 2000 cm2 V−1 s−1 at room temperature and it showed a maximum at 100 K and it has a carrier concentration of 1018 cm−3 at room temperature. X-ray diffraction (XRD) study at room temperature indicates that the as-prepared films are polycrystalline in nature. The lattice parameters were found to be a=4.353 Å, b=6.929 Å and c=7.805 Å. The electrical conductivity measurements showed that there exist two different activation energies below 300 K with energies 1.3 and 15.8 m eV.
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