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Electrochemical Growth of (0001)-n-ZnO Film on (111)-p-Cu2O Film and the Characterization of the Heterojunction Diode

2011; Institute of Physics; Volume: 158; Issue: 10 Linguagem: Inglês

10.1149/1.3623776

1945-7111

Binti Mohamad Fariza, Junji Sasano, Tsutomu Shinagawa, Hiromi Nakano, Seiji Watase, Masanobu Izaki,

Electronic and Structural Properties of Oxides

The (111)-p-Cu2O/(0001)-n-ZnO heterostructure was successfully fabricated using a low-temperature electrodeposition method on an Au(111)/Si(100) substrate. The structural, optical and electrical characterizations were carried out by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, transmission electron microscope-energy dispersive X-ray analysis, optical absorption, photoluminescence, and electrical measurements. Isolated hexagonal columnar ZnO grains deposited at a low cathodic current density and the interface between the ZnO and Cu2O film were clearly observed. The (0002)-oriented continuous ZnO film was deposited on the (111)-Cu2O film at higher cathodic current density, but the metallic Cu layer was formed between the ZnO and Cu2O films by reducing Cu2O to Cu0 during the ZnO deposition. The Cu2O/isolated-ZnO heterostructure showed an ohmic feature, and the (111)-Cu2O/Cu/(0002)-ZnO heterostructures showed an excellent rectification with the rectification ratio of ∼105.