New “universal” relation concerning 1/ƒ noise
1993; Elsevier BV; Volume: 180; Issue: 3 Linguagem: Inglês
10.1016/0375-9601(93)90712-9
ISSN1873-2429
Autores Tópico(s)Force Microscopy Techniques and Applications
ResumoIt ss shown that the Hooge coefficient αH which characterizes the 1/ƒ noise in semiconductor materials and devices satisfies the following relation: αH=βτ, where β≈102−5×103 s−1 is a coefficient and τ is the charge carrier lifetime determine d either by charge carrier capture at some recombination centers or traps or by carrier diffusion to the surface or to the electrical contacts where carriers recombine. The idea is discussed that some non-trivial slow relaxation procesess which are accompanied by 1/ƒ fluctuations may occur in the lattice of a semicondutor.
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