Reactive molecular-beam epitaxy of GaN layers directly on 6H–SiC(0001)
1999; American Institute of Physics; Volume: 75; Issue: 7 Linguagem: Inglês
10.1063/1.124562
ISSN1520-8842
AutoresA. Thamm, O. Brandt, Yasushi Takemura, A. Trampert, K. H. Ploog,
Tópico(s)Silicon Carbide Semiconductor Technologies
ResumoWe investigate the quality of GaN layers directly grown on 6H–SiC(0001) substrates by reactive molecular-beam epitaxy. Despite a pure three-dimensional nucleation, step-flow growth is achieved by in situ adjusting conditions such that the (2×2) reconstruction observed during growth is maximized in intensity. The resulting surface morphology exhibits large terraces separated by mono- and multiatomic steps, and is clearly superior to that obtained by plasma-assisted growth. Furthermore, the structural and optical properties of these layers are comparable to those of layers grown by plasma-assisted molecular-beam epitaxy.
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