Persistent photoconductivity in SIMOX film structures
1990; American Institute of Physics; Volume: 68; Issue: 7 Linguagem: Inglês
10.1063/1.346356
ISSN1520-8850
AutoresS. Mayo, Jeremiah R. Lowney, P. Roitman, Donald B. Novotny,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoPhotoinduced transient spectroscopy (PITS) was used to measure the persistent photoconductive (PPC) response in n-type separation by implanted oxygen (SIMOX) film resistors. A broadband, single-shot, flashlamp-pumped dye laser pulse was used to photoexcite interband electrons in the film, and the excess carrier population decay was measured at temperatures in the 60–220-K range. The PPC signals exhibit nonexponential character and the conductivity transients are recorded as a function of temperature for variable periods up to 30 s. The photoconductive data are analyzed by using the Queisser and Theodorou potential barrier model, and a logarithmic time-decay dependence is confirmed for the first time in SIMOX material. The hole-trap density at the conductive-film–buried-silica interface is calculated to be in the high 1015 cm−3 to low 1016 cm−3 range. The sensitivity of PITS is demonstrated to be appropriate for characterization of the SIMOX interface structure and for material qualification.
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