p -type conduction in as-grown Mg-doped GaN grown by metalorganic chemical vapor deposition
1998; American Institute of Physics; Volume: 72; Issue: 14 Linguagem: Inglês
10.1063/1.121172
ISSN1520-8842
AutoresLisa Sugiura, Mariko Suzuki, Johji Nishio,
Tópico(s)ZnO doping and properties
ResumoWe have clarified the effect of H2 and NH3 on the passivation of Mg acceptor in p-type GaN films grown by metalorganic chemical vapor deposition. It has been found that the small amount of H2 carrier gas strongly influences the electrical property of the Mg-doped GaN films. Low-resistivity p-type GaN has been obtained by H2-free growth without any post-treatments. Its acceptor concentration is as high as that obtained by conventional H2-rich growth with subsequent thermal annealing. It has also been clarified that hydrogen produced by NH3 dissociation does not prevent Mg from electrically activating in H2-free growth.
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