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Degradation of potential barriers in ZnO-based chip varistors due to electrostatic discharge

2012; American Institute of Physics; Volume: 112; Issue: 3 Linguagem: Inglês

10.1063/1.4742987

1520-8850

S. Hirose, Hideaki Niimi, Keisuke Kageyama, Hideharu Ieki, Takahisa Omata, Shinya Otsuka‐Yao‐Matsuo,

Semiconductor materials and devices

Degradation of potential barriers in ZnO-based varistors due to the electrostatic discharge (ESD) was investigated using scanning probe microanalysis and capacitance-time and isothermal capacitance transient spectroscopies. Pr6O11-ZnO (Pr-ZnO) varistors exhibit excellent ESD withstand capability compared with Bi2O3-ZnO (Bi-ZnO) varistors. After the application of ESD, asymmetrically degraded double Schottky barriers were observed in both Pr-ZnO and Bi-ZnO varistors, and the Schottky barrier in Bi-ZnO was found to be destroyed. The potential barriers of both types of varistors can respond to an ESD pulse, whose rise time is ∼1 ns, but after application of the ESD pulse, the Bi-ZnO varistor takes more time to recover its initial capacitance than does the Pr-ZnO varistor. Such difference in the transient behaviors of potential barriers is attributed to differences in the energy and distribution of interfacial states of Pr-ZnO and Bi-ZnO varistors. Experimental results clearly indicated a strong correlation between the transient behaviors of potential barriers and the ESD withstand capabilities of ZnO-based varistors.