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Boron redistribution in doping superlattices grown by silicon molecular beam epitaxy using B2O3

1988; American Institute of Physics; Volume: 53; Issue: 10 Linguagem: Inglês

10.1063/1.100101

1520-8842

T. E. Jackman, D. C. Houghton, M. W. Denhoff, Song Kechang, J. P. McCaffrey, J. A. Jackman, C. G. Tuppen,

Semiconductor materials and devices

Coevaporation of B2O3 during silicon molecular beam epitaxy has been used to prepare heavily doped superlattices (pipi’s). Full activation up to 3×1020 cm−3 (100 times the solid solubility limit) was obtained at growth temperatures below 700 °C. Significant boron redistribution has been observed into the undoped layers when the dopant level in the intentionally doped layers exceeds the solid solubility limit and the growth temperature is greater than 700 °C. Oxygen was not incorporated into the lattice for growth temperatures above 700 °C when using B2O3 as the source of boron, a Si growth rate for 0.5 nm s−1, and a B2O3 arrival rate of ∼2×1013 cm−2 s−1.