Dislocation Reduction in AlN and GaN Bulk Crystals Grown by HVPE
1999; Wiley; Volume: 176; Issue: 1 Linguagem: Inglês
10.1002/(sici)1521-396x(199911)176
ISSN1521-396X
AutoresM. Albrecht, И.П. Никитина, A. E. Nikolaev, Yu. Melnik, V. A. Dmitriev, H. P. Strunk,
Tópico(s)Metal and Thin Film Mechanics
ResumoWe analyse the dislocation distribution in GaN and AlN bulk crystals by transmission electron microscopy and X-ray diffraction. The crystals are grown by hydride vapour phase epitaxy onto 6H-SiC[0001] and Si(111) substrates. Two essentially different dislocation populations are observed: (i) a-type dislocations that show efficient dislocation density reduction (down to 4 × 105 cm–2) and (ii) a, (a + c) and c-type dislocations each type in a considerable density with less efficient dislocation reduction. We evaluate the dislocation processes that result in this different behaviour as dependent on the dislocation population.
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