Portal de Periódicos da CAPES

Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices

2007; American Institute of Physics; Volume: 90; Issue: 21 Linguagem: Inglês

10.1063/1.2742573

1520-8842

F. M. Yang, T. C. Chang, Po‐Tsun Liu, Ping‐Hung Yeh, U. S. Chen, Yixuan Yu, Jinfu Lin, Simon M. Sze, J. C. Lou,

Electronic and Structural Properties of Oxides

The nonvolatile memory device with multilayer nanocrystals has advantages such as the memory effects can be increased by the increasing density of the nanocrystals and the whole retention characteristic can be improved. There are much more electrons that can be stored in the double layer than single layer nanocrystal memory device. The double layer CoSi2 nanocrystals have better retention characteristic than the single layer. The good retention characteristic of the double layer device is due to the Coulomb-blockage effects on the top layer nanocrystals from the bottom layer nanocrystals. So, the memory effects of the nonvolatile memory device can be improved by using the double layer nanocrystals.