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Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

2014; American Association for the Advancement of Science; Volume: 346; Issue: 6215 Linguagem: Inglês

10.1126/science.1256815

1095-9203

Xiaofeng Qian, Junwei Liu, Liang Fu, Ju Li,

Graphene research and applications

We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external electric field. We propose a novel topological field effect transistor made of these atomic layer materials and their van der Waals heterostructures. Our device exhibits parametrically enhanced charge-spin conductance through topologically protected transport channels, and can be rapidly switched off by electric field through topological phase transition instead of carrier depletion. Our work provides a practical material platform and device architecture for topological quantum electronics.