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Validity/invalidity of Schottky-Mott rules for Schottky contacts to III-V nitride semiconductor heterostructures

2006; American Institute of Physics; Volume: 89; Issue: 16 Linguagem: Inglês

10.1063/1.2358956

1520-8842

C.C. Lu, S. Noor Mohammad,

GaN-based semiconductor devices and materials

Carrier transport through the metal/semiconductor and metal/semiconductor/semiconductor (M∕S∕S) Schottky contact interfaces has been studied. Metal/n-GaN, metal/n-AlxGa1−xN, and metal/n-AlxGa1−xN∕n-GaN diodes have been chosen for the study. It has been observed that, owing to the presence of the piezoelectric polarization field and a quantum well at the AlxGa1−xN∕GaN interface, the AlxGa1−xN∕GaN contacts exhibit properties distinctly different from those of the AlxGa1−xN contacts. The superiority of the AlxGa1−xN∕GaN contacts to that of the AlxGa1−xN contacts largely disappears at high temperatures. While the GaN and AlxGa1−xN contacts appear to obey the Schottky-Mott rule, the AlxGa1−xN∕GaN contacts tend to disobey it.