The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4:Eu2+,Dy3+ thin films
2009; Elsevier BV; Volume: 404; Issue: 22 Linguagem: Inglês
10.1016/j.physb.2009.09.016
ISSN1873-2135
AutoresO.M. Ntwaeaborwa, P.D. Nsimama, Jeremiah T. Abiade, E. Coetsee, H.C. Swart,
Tópico(s)Glass properties and applications
ResumoIn this study, SrAl2O4:Eu2+,Dy3+ thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40–700 °C. The structure, morphology and topography of the films were determined by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Photoluminescence (PL) data was collected in air at room temperature using a 325 nm He–Cd laser as an excitation source. The PL spectra of all the films were characterized by green phosphorescent photoluminescence at ∼530 nm. This emission was attributed to 4f65d1→4f7 transition of Eu2+. The highest PL intensity was observed from the films deposited at a substrate temperature of 400 °C. The effects of varying substrate temperature on the PL intensity were discussed.
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