<title>SiC-AlN-composition-based MEMS</title>
1999; SPIE; Volume: 3903; Linguagem: Inglês
10.1117/12.369453
ISSN1996-756X
AutoresВ. В. Лучинин, Andrey V. Korlyakov, A.A. Vasil'ev, Givi I. Jandjgava, Stanislav V. Prosorov, Aleksander K. Solomatin, Anatoley V. Sorokin, Sergey G. Kucherkov, Л. А. Северов, Valeriy K. Ponomarev,
Tópico(s)GaN-based semiconductor devices and materials
ResumoThe classical microelectromechanics is oriented to the standard silicon technology which is presently dominated by the 'silicon-on-silicon dioxide' structure. This choice presents a combination of two wide band gap materials: one is aluminum nitride which is a pronounced dielectric and possesses piezoelectric properties as well, and the other, silicon carbide, is a typical semiconductor. Both of them are optically active, including the UV region, and have high heat conductances and Debye temperatures which are characteristic of the material durability against thermal, chemical and radiation influences.
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