<title>SiC-AlN-composition-based MEMS</title>

1999; SPIE; Volume: 3903; Linguagem: Inglês

10.1117/12.369453

ISSN

1996-756X

Autores

В. В. Лучинин, Andrey V. Korlyakov, A.A. Vasil'ev, Givi I. Jandjgava, Stanislav V. Prosorov, Aleksander K. Solomatin, Anatoley V. Sorokin, Sergey G. Kucherkov, Л. А. Северов, Valeriy K. Ponomarev,

Tópico(s)

GaN-based semiconductor devices and materials

Resumo

The classical microelectromechanics is oriented to the standard silicon technology which is presently dominated by the 'silicon-on-silicon dioxide' structure. This choice presents a combination of two wide band gap materials: one is aluminum nitride which is a pronounced dielectric and possesses piezoelectric properties as well, and the other, silicon carbide, is a typical semiconductor. Both of them are optically active, including the UV region, and have high heat conductances and Debye temperatures which are characteristic of the material durability against thermal, chemical and radiation influences.

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