The Auger Rate in Highly Excited Indium Antimonide
1982; Wiley; Volume: 110; Issue: 1 Linguagem: Inglês
10.1002/pssb.2221100146
ISSN1521-3951
Autores Tópico(s)Advanced Materials Characterization Techniques
Resumophysica status solidi (b)Volume 110, Issue 1 p. K11-K15 Short Note The Auger Rate in Highly Excited Indium Antimonide P. M. Fauchet, P. M. Fauchet Edward L. Ginzton Laboratory, Stanford University Search for more papers by this author P. M. Fauchet, P. M. Fauchet Edward L. Ginzton Laboratory, Stanford University Search for more papers by this author First published: 1 March 1982 https://doi.org/10.1002/pssb.2221100146Citations: 14 Stanford, California 94305, USA. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL References 1 A. R. Beattie and G. Smith Phys. stat. sol. 19 577 (1967). 2 P. T. Landsbefg and D. J. Robbins Solid State Electronics 21 1289 (1978). 3 A. Haw; Solid State Electronics 21 1275 (1978). 4 L. A. Almazov, A. I. Liptuga, V. K. Malyutenko and L. L. Fedorenko; Soviet Phys. - Semicond. 14 1154 (1980). 5 P. M. Fauchet, Phys. stat. sol. (a) 58 K211 (1980). 6 P. M. Fauchet, unpublished 1980. 7 R. A. Smith, Semiconductors, 2nd ed., Cambridge University Press, 1978 (p. 429). 8 R. Stratton, Proc. Roy. Soc. (London) A246, 406 (1958). 9 S. A. Jamison, A. V. Nurmikko, and H. J. Gerritsen, Appl. Phys. Letters 29, 640 (1976). 10 W. G. Spitzer and H. Y. Fan, Phys. Rev. 106, 882 (1957). Citing Literature Volume110, Issue11 March 1982Pages K11-K15 ReferencesRelatedInformation
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