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Ground state energy of an exciton bound to an ionized donor impurity in semiconductor quantum wells

1991; Elsevier BV; Volume: 80; Issue: 12 Linguagem: Inglês

10.1016/0038-1098(91)90403-i

1879-2766

L. Stauffer, B. Stébé,

Advanced Semiconductor Detectors and Materials

Abstract The ground state energy of an exciton bound to an ionized hydrogenic donor impurity placed at the centre of a semiconductor quantum well with finite barriers is calculated variationally as a function of the well width and the effective mass ratio of the electron and the hole within the envelope function approximation. For the GaAs/Ga 1-x Al x As system with x = 0.15 and x = 0.30 the energy is minimum for a well width near 50 Angstroms. This minimum is comprized between the values obtained in the 2D limits.