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Low-voltage pentacene thin-film transistors with Ta2O5 gate insulators and their reversible light-induced threshold voltage shift

2005; American Institute of Physics; Volume: 86; Issue: 13 Linguagem: Inglês

10.1063/1.1896099

1520-8842

Yan Liang, Guifang Dong, Hu Yan, Liduo Wang, Yong Qiu,

Thin-Film Transistor Technologies

We have fabricated pentacene thin-film transistors using Ta2O5 films prepared by magnetron reactive sputtering as gate insulators. These transistors exhibit good electrical characteristics at an operating voltage as low as 5 V, with a field-effect mobility of 0.32cm2∕Vs, an on∕off ratio of 104, and a subthreshold slope of 0.5V∕decade. We have also investigated the optical properties of these transistors and observed a reversible light-induced threshold voltage shift. Under illumination, the threshold voltage shifts towards the positive direction while the field-effect mobility and on∕off ratio remain almost unchanged. In the dark, however, the threshold voltage can slowly be restored to its original state. At a gate voltage of −5V, the transistors show a broadband responsivity of 3.7A∕W after illumination at 60μW∕cm2 for 10 min.