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Effects of Sputtering Gas Pressure on Electrochromic Properties of Ni Oxyhydroxide Thin Films Prepared by Reactive Sputtering in H 2 O Atmosphere

2010; Institute of Physics; Volume: 49; Issue: 11R Linguagem: Inglês

10.1143/jjap.49.115802

1347-4065

Yoshio Abe, Hideaki Ueta, Takeshi Obata, Midori Kawamura, Katsutaka Sasaki, Hidenobu Itoh,

Thin-Film Transistor Technologies

Ni oxyhydroxide (NiOOH) thin films were prepared by reactive sputtering in an atmosphere of H 2 O gas, and the effects of sputtering gas pressure on their electrochromic properties in KOH aqueous electrolyte were studied. The largest optical density change was obtained for the thin films deposited under high sputtering gas pressures of approximately 6.7 Pa because of their low film density and chemical composition close to NiOOH. Stable transmittance change during coloring and bleaching cycles was obtained for the film from the first cycle up to 100 cycles.