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In2O3 : (Sn) and SnO2 : (F) films - application to solar energy conversion part II — Electrical and optical properties

1979; Elsevier BV; Volume: 14; Issue: 2 Linguagem: Inglês

10.1016/0025-5408(79)90115-6

1873-4227

J.-C. Manifacier, L. Szepessy, J. F. Bresse, M. Pérotin, R. Stuck,

Chalcogenide Semiconductor Thin Films

Highly conductive and transparent thin films of SnO2 : F and In2O3 : Sn have been prepared using the simple pyrolitic (spray) method. The electrical properties of these layers are studied in relation to their dopant concentrations and their stoichiometric deviation. Typically we obtained for In2O3 : Sn and SnO2 : F layers having the best overall properties (higher transparency and lower sheet resistance), resistivities ranging between 4 and 6.10−4 Ω cm with transparency exceding 85% over the visible and near infra-red range of the spectrum. Emphasis is put on the possible applications of these films in solar energy conversion systems (solar cell and flat plate collectors technology).