Piezotronic Effect on the Transport Properties of GaN Nanobelts for Active Flexible Electronics
2012; Volume: 24; Issue: 26 Linguagem: Inglês
10.1002/adma.201201020
ISSN1521-4095
AutoresRuomeng Yu, Lin Dong, Caofeng Pan, Simiao Niu, Hongfei Liu, Wei Liu, Soo-Jin Chua, Dongzhi Chi, Zhong Lin Wang,
Tópico(s)Nanowire Synthesis and Applications
ResumoThe transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.
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