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Low‐Temperature Deterministic Growth of Ge Nanowires Using Cu Solid Catalysts

2008; Volume: 20; Issue: 24 Linguagem: Inglês

10.1002/adma.200801764

1521-4095

Kibum Kang, Dong An Kim, Hyun‐Seung Lee, Cheol‐Joo Kim, Jee‐Eun Yang, Moon‐Ho Jo,

Semiconductor materials and interfaces

Advanced MaterialsVolume 20, Issue 24 p. 4684-4690 Communication Low-Temperature Deterministic Growth of Ge Nanowires Using Cu Solid Catalysts† Kibum Kang, Kibum Kang Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea)Search for more papers by this authorDong An Kim, Dong An Kim Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea)Search for more papers by this authorHyun-Seung Lee, Hyun-Seung Lee Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea)Search for more papers by this authorCheol-Joo Kim, Cheol-Joo Kim Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea)Search for more papers by this authorJee-Eun Yang, Jee-Eun Yang Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea)Search for more papers by this authorMoon-Ho Jo, Corresponding Author Moon-Ho Jo [email protected] Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea)Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea).Search for more papers by this author Kibum Kang, Kibum Kang Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea)Search for more papers by this authorDong An Kim, Dong An Kim Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea)Search for more papers by this authorHyun-Seung Lee, Hyun-Seung Lee Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea)Search for more papers by this authorCheol-Joo Kim, Cheol-Joo Kim Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea)Search for more papers by this authorJee-Eun Yang, Jee-Eun Yang Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea)Search for more papers by this authorMoon-Ho Jo, Corresponding Author Moon-Ho Jo [email protected] Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea)Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea).Search for more papers by this author First published: 16 December 2008 https://doi.org/10.1002/adma.200801764Citations: 68 † The authors thank Profs. Hyungjun Kim and Byeong-Joo Lee for helpful discussions. This research was supported by Nano R&D program through the KOSEF (2007-02864), the "System IC 2010" program by the MOCIE, the MOST-AFOSR NBIT 2007 Program funded through the KICOS (No. K20716000006-07A0400-00610), the Korean Research Foundation Grant from MOEHRD (KRF-2005-005-J13103), and Samsung Electronics. Supporting Information is available online from Wiley InterScience or from the author. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract Cu-Catalytic Growth of Ge Nanowires: Low temperature, deterministic growth characteristics are available by the Cu-catalytic growth. The low-temperature growth is accessible at as low as 200 °C on polymer substrates, and the epitaxial growth is also possible on single-crystalline substrates with the narrow diameter distribution of 7 nm, directly templated from those of Cu catalysts. Supporting Information Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Filename Description adma_200801764_sm_supplfigs.pdf2.6 MB supplfigs Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. 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