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Subquarter-micrometer gate-length p-channel and n-channel MOSFETs with extremely shallow source-drain junctions

1989; Institute of Electrical and Electronics Engineers; Volume: 36; Issue: 2 Linguagem: Inglês

10.1109/16.19941

1557-9646

M. Miyake, Takashi Kobayashi, Y. Okazaki,

Integrated Circuits and Semiconductor Failure Analysis

The fabrication of p-channel and n-channel MOSFETs with sub-quarter-micrometer n/sup +/ polysilicon gates, have been fabricated using extremely shallow source-drain (S-D) junctions, is reported p/sup +/-n junctions as shallow as 80 nm have been fabricated using preamorphization low-energy BF/sub 2/ ion implantation and rapid thermal annealing, and 80-nm n/sup +/-p junctions have been fabricated using low-energy arsenic ion implantation and rapid thermal annealing. n-channel MOSFETs with 80-mm S-D junctions and 0.16- mu m gate lengths have been fabricated, and a maximum transconductance of 400 mS/mm has been obtained. 51-stage n-channel enhancement-mode/enhancement-mode (E/E) ring oscillators and p-channel E/E ring oscillators with extremely shallow S-D junctions have also been obtained. >