Bright visible photoluminescence in thin silicon films
1992; Elsevier BV; Volume: 222; Issue: 1-2 Linguagem: Inglês
10.1016/0040-6090(92)90068-m
ISSN1879-2731
AutoresT. P. Pearsall, Jeff C. Adams, John N. Kidder, Philip S. Williams, S. A. Chambers, John L. Lach, Daniel T. Schwartz, B. Z. Nosho,
Tópico(s)Semiconductor materials and devices
ResumoAbstract We studied visible photoluminescence in etched p− silicon films produced by chemical etching and electrochemical etching. Topographical examination did not show any apparent network of quantum wire structures. Diffraction data, however, indicated the presence of a non-crystalline layer at the etched surface. Photo-emission studies showed that Si and oxygen were present, but that flourine was absent in the surface layer. The valence of the predominant Si species at the surface is +3. The temperature dependence of photoluminescence shows that optical recombination does not involve interactions of electrons and holes in extended states, but is more representative of electron-hole interactions in disordered materials where localization plays a dominant role.
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