Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
2014; American Chemical Society; Volume: 14; Issue: 9 Linguagem: Inglês
10.1021/nl5021409
ISSN1530-6992
AutoresQian Gao, Dhruv Saxena, Fan Wang, Lan Fu, Sudha Mokkapati, Yanan Guo, Li Li, J. Wong‐Leung, Philippe Caroff, Hark Hoe Tan, C. Jagadish,
Tópico(s)Semiconductor materials and interfaces
ResumoWe report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal–organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.
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