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Thermal Annealing Effects on P-Type Mg-Doped GaN Films

1992; Institute of Physics; Volume: 31; Issue: 2B Linguagem: Inglês

10.1143/jjap.31.l139

1347-4065

Shuji Nakamura, Takashi Mukai, Masayuki Senoh, Naruhito Iwasa,

ZnO doping and properties

Low-resistivity p-type GaN films were obtained by N 2 -ambient thermal annealing at temperatures above 700°C for the first time. Before thermal annealing, the resistivity of Mg-doped GaN films was approximately 1×10 6 Ω·cm. After thermal annealing at temperatures above 700°C, the resistivity, hole carrier concentration and hole mobility became 2 Ω·cm, 3×10 17 /cm 3 and 10 cm 2 /V·s, respectively. In photoluminescence measurements, the intensity of 750-nm deep-level emissions (DL emissions) sharply decreased upon thermal annealing at temperatures above 700°C, as did the change in resistivity, and 450-nm blue emissions showed maximum intensity at approximately 700°C of thermal annealing.