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Abrupt heating-induced high-quality crystalline rubrene thin films for organic thin-film transistors

2011; Elsevier BV; Volume: 12; Issue: 8 Linguagem: Inglês

10.1016/j.orgel.2011.05.015

1878-5530

Jeong Yong Lee, Hanul Moon, Hyo-Sik Kim, Yong Nam Kim, Sung‐Min Choi, Seunghyup Yoo, Sung Oh Cho,

Advanced Sensor and Energy Harvesting Materials

We present a simple but effective approach to fabricate high-quality crystalline rubrene thin-film active layers for organic thin-film transistors (OTFTs) based on an abrupt heating process. Through this method, continuous, highly ordered, and highly oriented crystalline rubrene thin films comprising large single-crystalline grains (average size: ∼80 μm) can be remarkably rapidly produced in just 1 min without any dielectric surface modification process. OTFTs with carrier mobility as high as 1.21 cm2 V−1 s−1 and on/off current ratios greater than 106 are demonstrated under air-ambient condition using the approach. These results suggest that our approach is very promising to fabricate high-performance OTFTs for practical applications in organic electronics.