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512-Mb PROM with a three-dimensional array of diode/antifuse memory cells

2003; Institute of Electrical and Electronics Engineers; Volume: 38; Issue: 11 Linguagem: Inglês

10.1109/jssc.2003.818147

1558-173X

Mark Johnson, Ali Al-Shamma, D. Bosch, Matthew Crowley, M. Farmwald, L. Fasoli, Alper Ilkbahar, B. Kleveland, T. Lee, Tz-yi Liu, Quang K. Nguyen, R.E. Scheuerlein, K. So, T. Thorp,

Ferroelectric and Negative Capacitance Devices

A 512-Mb one-time-programmable memory is described, which uses a transistorless two-terminal memory cell containing an antifuse and a diode. Cells are fabricated in polycrystalline silicon, stacked vertically in eight layers above a 0.25-μm CMOS substrate. One-time programming is performed by applying a high voltage across the cell terminals, which ruptures the antifuse and permanently encodes a logic 0. Unruptured antifuses encode a logic 1. Cells are arranged in 8-Mb tiles, 1 K rows by 1 K columns by 8 bits high. The die contains 72 such tiles: 64 tiles for data and eight tiles for error-correcting code bits. Wordline and bitline decoders, bias circuits, and sense amplifiers are built in the CMOS substrate directly beneath the memory tiles, improving die efficiency. The device supports a generic standard NAND flash interface and operates from a single 3.3-V supply.