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Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

2014; Institute of Electrical and Electronics Engineers; Volume: 62; Issue: 2 Linguagem: Inglês

10.1109/ted.2014.2356172

1557-9646

Aivars J. Lelis, Ron Green, Daniel B. Habersat, Mooro El,

Integrated Circuits and Semiconductor Failure Analysis

A review of the basic mechanisms affecting the stability of the threshold voltage in response to a bias-temperature stress is presented in terms of the charging and activation of near-interfacial oxide traps. An activation energy of approximately 1.1 eV was calculated based on new experimental results. Implications of these factors, including the recovery of some bias-temperature stress-activated defects, for improved device reliability testing are discussed.