An infrared study of Ge+ implanted SiC
1996; Elsevier BV; Volume: 102; Linguagem: Inglês
10.1016/0169-4332(96)00045-1
ISSN1873-5584
AutoresT. Zorba, C.L. Mitsas, I.D. Siapkas, G.Z. Terzakis, D. Siapkas, Y. Pacaud, W. Skorupa,
Tópico(s)Advanced ceramic materials synthesis
ResumoAbstract The damage produced by 200 keV Ge + ion implantation in 6H-SiC (from Cree Research) has been studied by fast Fourier transform infrared (IR) reflectance spectroscopy. A new, recently developed at the spectroscopy laboratory of AUTh, non-destructive optical method, based on the normalized atomic vibrational damping of the ‘reststrahlen band’, has been applied to determine damage depth profiles of SiC for damage over three orders of magnitude, up to amorphisation. For the amorphized state IR results show an up to 30% reduction of heteronuclear SiC bonds. No new broad SiSi or CC vibrational bands were observed.
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