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Porous GaP Multilayers Formed by Electrochemical Etching

2002; Electrochemical Society; Volume: 5; Issue: 5 Linguagem: Inglês

10.1149/1.1466935

1944-8775

R.W. Tjerkstra, Jaime Gómez Rivas, Daniël Vanmaekelbergh, John J. Kelly,

Anodic Oxide Films and Nanostructures

The properties of porous GaP, formed by anodic etching in are described. Pore size, pore density, and the interpore distance depend on the dopant density and the potential at which the sample is etched. In addition, it is shown that at high potential, the GaP passivates as a result of the formation of an oxide layer. These features allow us to grow multilayer structures of GaP with modulated porosity and/or oxide layers. The dissolution of oxide at the base of a porous layer can be used to produce freestanding porous membranes. © 2002 The Electrochemical Society. All rights reserved.