Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN
2006; American Institute of Physics; Volume: 89; Issue: 7 Linguagem: Inglês
10.1063/1.2234741
ISSN1520-8842
AutoresSerkan Bütün, Mutlu Gökkavas, Hongbo Yu, Ekmel Özbay,
Tópico(s)Ga2O3 and related materials
ResumoMetal-semiconductor-metal photodetectors on semi-insulating GaN templates were demonstrated and compared with photodetectors fabricated on regular GaN templates. Samples were grown on a metal organic chemical vapor deposition system. Devices on semi-insulating template exhibited a dark current density of 1.96×10−10A∕cm2 at 50V bias, which is four orders of magnitude lower compared with devices on regular template. Device responsivities were 101.80 and 88.63A∕W at 50V bias for 360nm ultraviolet illumination for semi-insulating and regular templates, respectively. Incident power as low as 3pW was detectable using the devices that were fabricated on the semi-insulating template.
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