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Digital Alloys of AlN/AlGaN for Deep UV Light Emitting Diodes

2005; Institute of Physics; Volume: 44; Issue: 10R Linguagem: Inglês

10.1143/jjap.44.7221

1347-4065

S. A. Nikishin, M. Holtz, H. Temkin,

Photocathodes and Microchannel Plates

We report a systematic study of the optical and electrical properties of deep ultraviolet light emitting diodes based on digital alloy structures of AlN/Al 0.08 Ga 0.92 N grown by gas source molecular beam epitaxy with ammonia. Digital alloys are formed by short period superlattices consisting of Al 0.08 Ga 0.92 N wells, 0.50 or 0.75 nm thick, and AlN barriers, 0.75 to 1.5 nm thick. For digital alloys with effective bandgap of 5.1 eV, average AlN composition 72%, we obtain room temperature electron concentrations up to 1×10 19 cm -3 and resistivity of 0.005 Ω·cm and hole concentrations of 1×10 18 cm -3 with resistivity of 6 Ω·cm. Light emitting diodes based on digital alloys are demonstrated operating in the range of 250 to 290 nm.