Formation of epitaxial Tl2Ba2CaCu2O8 thin films at low temperature in pure argon
1993; American Institute of Physics; Volume: 63; Issue: 13 Linguagem: Inglês
10.1063/1.110805
ISSN1520-8842
AutoresS. L. Yan, Fang Lan, Qing‐Wen Song, Jun‐Min Yan, Yunna Zhu, Jinbo Chen, S. B. Zhang,
Tópico(s)Rare-earth and actinide compounds
ResumoMirror-like Tl2Ba2CaCu2O8 thin films have been reproducibly prepared on (001)LaAlO3 substrates by dc magnetron sputtering using 80% argon and 20% oxygen and post-annealing at temperatures of 720–760 °C in 1 atm pure argon. X-ray diffraction patterns of θ-2θ scans, φ scans, and Read camera photographs prove that the thin films are strongly textured with the c-axis perpendicular to the substrate surfaces and epitaxially grown to the substrate with Tl2Ba2CaCu2O8(100) parallel to the LaAlO3(100). The zero resistance temperatures are in the range of 105.2–108.6 K for the 0.2–1.0-μm-thick films. The critical current density of 5.3×106 A/cm2 at 77 K has been obtained at zero magnetic field for a 0.4-μm-thick film.
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