Extremely Small Proximity Effect in 30 keV Electron Beam Drawing with Thin Calixarene Resist for 20×20 nm 2 Pitch Dot Arrays
2008; Institute of Physics; Volume: 1; Linguagem: Inglês
10.1143/apex.1.027003
ISSN1882-0786
AutoresSumio Hosaka, Zulfakri bin Mohamad, Masumi Shira, Hirotaka Sano, You Yin, Akihira Miyachi, Hayato Sone,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoWe studied proximity effect in 30 keV electron beam (EB) drawing with calixarene resist for patterned media and quantum devices. Using about 15-nm-thick calixarene resist on Si substrate in conventional EB drawing system, the proximity effect has been studied by forming and observing 20-, 25-, 30-, and 40-nm-pitch resist dot arrays and measuring exposure dosage intensity distribution (EID) function. As a result, the proximity effect is negligible small due to comparing with some dot sizes in center, side and corner of 2 µm square with 25×25 nm2 pitch dot arrays. In addition, the proximity effect parameter η in EID function is less than 0.3. It is clear that the EB drawing and calixarene resist system is very suitable for forming ultrahigh packed dot arrays pattern. We demonstrated 20×20 nm2 pitch resist dot arrays (about 1.6 Tb/in.2) with a dot diameter of about 14 nm and the same size as everywhere in the pattern.
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