Interface defects and inhomogeneities induced by alloy clustering in InAlAs buffer layers grown on InP
1993; Elsevier BV; Volume: 65-66; Linguagem: Inglês
10.1016/0169-4332(93)90700-l
ISSN1873-5584
AutoresF. Peiró, A. Cornet, J.R. Morante, A. Georgakilas, Konstantinos Zekentes, G. Halkias,
Tópico(s)Silicon and Solar Cell Technologies
ResumoIn this work, InAlAs layers grown on (100) InP by MBE, at temperatures higher than 530°C have been studied by TEM. Our results show that contrast inhomogeneities appear beyond a critical value of the growth temperature, at which they are nonuniformly distributed. When the temperature increases, the inhomogeneities cover all the layer. A correlation between these inhomogeneities and the presence of precipitates at the interface is also presented.
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