Portal de Periódicos da CAPES

Growth of (Bil−xSbx)2Te3 thin films by metal-organic chemical vapour deposition

2000; Elsevier BV; Volume: 62; Issue: 2 Linguagem: Inglês

10.1016/s0254-0584(99)00155-8

1879-3312

B. Aboulfarah, A. Mzerd, Alain Giani, Abdellah Boulouz, F. Pascal‐Delannoy, A. Foucaran, A. Boyer,

Chalcogenide Semiconductor Thin Films

Abstract The effects of VI/V ratio on electrical and thermoelectrical properties of p-type (Bi 1− x Sb x ) 2 Te 3 elaborated by metal-organic chemical vapour deposition (MOCVD) in horizontal quartz reactor are discussed. The deposited layers exhibit a polycrystalline structure and an improvement in the intensity is observed with increasing the VI/V ratio. The quality of the layers is measured by means of the Energy dispersive X-ray (EDX) microanalyser and scanning electron microscopy (SEM). It is observed that the layers are stoichiometric when the VI/V ratio exceeds 3 and the surface texture is improved with increasing this ratio. The electrical properties of the thin films dependent on the VI/V ratio. The measurements of the Seebeck coefficient suggest a significant potential of MOCVD growth for large-scale production of thermoelectric materials.