Exploring capabilities of electrical linewidth measurement (ELM) techniques
2001; Elsevier BV; Volume: 57-58; Linguagem: Inglês
10.1016/s0167-9317(01)00455-5
ISSN1873-5568
AutoresVentzeslav Rangelov, Marko Sarstedt, J M Somerville, T. Marschner, R. Jonckheere, A. Poelaert,
Tópico(s)Semiconductor materials and devices
ResumoIn this paper, we have investigated the linearity of the electrical linewidth measurement, and the relation to the linewidth values measured with a CD-SEM. The collected data has shown an almost constant bias between ELM and SEM values tested down to 50 nm. A comparison between poly- and α-Si lines with respect to different grain sizes was done. A further point of interest was the influence of the geometry of a line (e.g. straight vs. bent), as well as the dependence of the ELM result with regard to a changing linewidth along its length. An overview of an error analysis for the whole experimental procedure is presented.
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