High contrast multiple quantum well optical bistable device with integrated Bragg reflectors
1990; American Institute of Physics; Volume: 57; Issue: 4 Linguagem: Inglês
10.1063/1.103679
ISSN1520-8842
AutoresB. Sfez, J. L. Oudar, Jürgen Michel, R. Kuszelewicz, R. Azoulay,
Tópico(s)Advanced Fiber Laser Technologies
ResumoMonolithic bistable étalons with a GaAs/Al0.3Ga0.7As multiple quantum well active layer and AlAs/Al0.1Ga0.9As Bragg reflectors have been fabricated by metalorganic vapor phase epitaxy. The design of the whole structure is such that a good cavity finesse and a high contrast in the reflective mode are simultaneously obtained. This results in a bistability power threshold of <3 mW at 838 nm and a contrast ratio as high as 30:1. The nonlinear refractive index is shown to saturate at higher power, which evidences the need of a good cavity finesse for such bistable devices.
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