Scanning tunneling spectroscopy and density functional calculation of silicon dangling bonds on the Si(100)-2×1:H surface
2012; Elsevier BV; Volume: 609; Linguagem: Inglês
10.1016/j.susc.2012.11.015
ISSN1879-2758
AutoresWei Ye, Kyoungmin Min, Pamela Peña Martin, Angus Rockett, N. R. Aluru, Joseph W. Lyding,
Tópico(s)Molecular Junctions and Nanostructures
ResumoWe studied electronic properties of atomic-scale dangling bond (DB) and DB wires on Si(100)-2 × 1:H surfaces using a ultrahigh vacuum scanning tunneling microscope (UHV-STM). The decay of the near-midgap DB-states induced by an unpaired DB depends on the crystalline orientation of the Si(100) surface. The decay length of the DB-states of an unpaired DB wire can be ~ 2.5 nm along the dimer row direction. The perturbation from an unpaired DB to an adjacent paired DB is also demonstrated. The results are in good agreement with density functional calculations.
Referência(s)