Au/ZnSe contacts characterized by ballistic electron emission microscopy
1996; American Institute of Physics; Volume: 79; Issue: 3 Linguagem: Inglês
10.1063/1.360996
ISSN1520-8850
AutoresB. A. Morgan, Ken M. Ring, K. L. Kavanagh, A. Alec Talin, R. Stanley Williams, Takashi Yasuda, T. Yasui, Yusaburo Segawa,
Tópico(s)Semiconductor materials and devices
ResumoBallistic electron emission microscopy (BEEM) has been performed on Au/ZnSe (001) diodes prepared in ultra high vacuum. An average barrier height (BH) of 1.37 eV is found for Au/n-ZnSe in close agreement with previously published values for diodes measured by conventional techniques. The BH distribution is relatively narrow, from 1.32 to 1.43 eV, consistent with cross-sectional transmission electron microscopy which indicates that the interface is abrupt, and without reaction products. These results differ from those reported for BEEM measurements on chemically etched Au/ZnSe diodes. [R. Coratger et al., Phys. Rev. B. 51, 2357 (1995)].
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