A study of the 28Si(d, p)29Si reaction
1983; Elsevier BV; Volume: 408; Issue: 2 Linguagem: Inglês
10.1016/0375-9474(83)90582-1
ISSN1873-1554
AutoresR.J. Peterson, Chris Fields, R. S. Raymond, J.R. Thieke, J.L. Ullman,
Tópico(s)X-ray Spectroscopy and Fluorescence Analysis
ResumoThe 28Si(d, p)29Si reaction has been studied at 17.85 MeV with a very clean silicon target allowing the study of sharp states up to an excitation of 14.8 MeV. Spectroscopic factors for bound states were obtained with-good reliability; these compare well to calculated values for strong low-lying states. A weak-coupling model allowed multistep calculations for several states, resulting in improved fits to the stripping cross-section data. Data for states above the neutron threshold in 29Si were compared to DWBA calculations using unbound form factors. The sums of spectroscopic factors show a more complete closure of the d52 shell at 28Si than is predicted by Hartree-Fock methods.
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