Origin of step formation on the GaAs(311) surface
2002; American Physical Society; Volume: 66; Issue: 19 Linguagem: Inglês
10.1103/physrevb.66.193313
ISSN1095-3795
AutoresZ. M. Wang, V. R. Yazdanpanah, C. L. Workman, Wenquan Ma, John L. Shultz, Gregory J. Salamo,
Tópico(s)Quantum and electron transport phenomena
ResumoGaAs(311) surfaces grown by molecular beam epitaxy are investigated by in situ ultrahigh-vacuum scanning tunnelling microscopy. The observation of an atomically flat $\mathrm{Ga}(2\ifmmode\times\else\texttimes\fi{}1)$-reconstructed GaAs(311) surface and its transformation to a $8\ifmmode\times\else\texttimes\fi{}1$-reconstructed GaAs(311) surface leads to an improved understanding of the processes involved in the step formation. The high density of steps observed on the $8\ifmmode\times\else\texttimes\fi{}1$-reconstructed GaAs(311) surface along the $[2\ifmmode\bar\else\textasciimacron\fi{}33]$ direction originates from the change of surface atomic density required to accommodate the surface transition from the $\mathrm{Ga}(2\ifmmode\times\else\texttimes\fi{}1)$ surface to the $8\ifmmode\times\else\texttimes\fi{}1$ surface. This understanding is further supported by the observation of independent step formation.
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