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Direct measurement of heavy-hole exciton transport in type-II GaAs/AlAs superlattices

1993; American Physical Society; Volume: 71; Issue: 22 Linguagem: Inglês

10.1103/physrevlett.71.3717

1092-0145

G. D. Gilliland, Alex Antonelli, D. J. Wolford, K. K. Bajaj, John F. Klem, J. A. Bradley,

Advancements in Semiconductor Devices and Circuit Design

We have directly measured the transport of heavy-hole excitons in a type-II GaAs/AlAs superlattice. Our results constitute the first direct confirmation of exciton localization in type-II structures and thermal activation to more mobile states. We have also developed a quantitative model to explain our transport and kinetics results, and have obtained the nonradiative interfacial defect density.