Portal de Periódicos da CAPES

30-band k⋅p method for quantum semiconductor heterostructures

2011; American Institute of Physics; Volume: 98; Issue: 25 Linguagem: Inglês

10.1063/1.3600643

1520-8842

Soline Boyer‐Richard, F. Raouafi, Alexandre Bondi, Laurent Pédesseau, Claudine Katan, Jean‐Marc Jancu, Jacky Even,

ZnO doping and properties

We illustrate how the linear combination of zone center bulk bands combined with the full-zone k⋅p method can be used to accurately compute the electronic states in semiconductor nanostructures. To this end we consider a recently developed 30-band model which carefully reproduces atomistic calculations and experimental results of bulk semiconductors. The present approach is particularly suited both for short-period superlattices and large nanostructures where a three-dimensional electronic structure is required. This is illustrated by investigating ultrathin GaAs/AlAs superlattices.