Piezoelectric Potential Gated Field-Effect Transistor Based on a Free-Standing ZnO Wire
2009; American Chemical Society; Volume: 9; Issue: 10 Linguagem: Inglês
10.1021/nl901606b
ISSN1530-6992
AutoresPeng Fei, Ping‐Hung Yeh, Jun Zhou, Sheng Xu, Yifan Gao, Jinhui Song, Yudong Gu, Yanyi Huang, Zhong Lin Wang,
Tópico(s)Advanced MEMS and NEMS Technologies
ResumoWe report an external force triggered field-effect transistor based on a free-standing piezoelectric fine wire (PFW). The device consists of an Ag source electrode and an Au drain electrode at two ends of a ZnO PFW, which were separated by an insulating polydimethylsiloxane (PDMS) thin layer. The working principle of the sensor is proposed based on the piezoelectric potential gating effect. Once subjected to a mechanical impact, the bent ZnO PFW cantilever creates a piezoelectric potential distribution across it width at its root and simultaneously produces a local reverse depletion layer with much higher donor concentration than normal, which can dramatically change the current flowing from the source electrode to drain electrode when the device is under a fixed voltage bias. Due to the free-standing structure of the sensor device, it has a prompt response time less than 20 ms and quite high and stable sensitivity of 2%/μN. The effect from contact resistance has been ruled out.
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