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Temperature Dependence of Exciton Lifetimes in GaAs/AlGaAs Quantum Well Structures

1990; Institute of Physics; Volume: 12; Issue: 5 Linguagem: Inglês

10.1209/0295-5075/12/5/007

1286-4854

M. Colocci, M. Gurioli, A. Vinattieri, F. Fermi, C. Deparis, J. Massies, G. Neu,

Quantum Dots Synthesis And Properties

The photoluminescence decay times in GaAs/AlGaAs single quantum well structures with layer thickness between 20 Å and 80 Å have been investigated in the temperature range from 4 K up to room temperature. It is shown that the increase in the PL decay time usually ascribed to radiative free-excitons recombination is present even in conditions where other mechanisms such as recombination of localized excitons and free carriers, exciton ionization and thermal activation of nonradiative processes are effective.