Effects of nitrogen flow rate in ohmic contacts on InAlN/GaN heterostructures
2014; Institution of Engineering and Technology; Volume: 50; Issue: 21 Linguagem: Inglês
10.1049/el.2014.2061
ISSN1350-911X
AutoresDae‐Myeong Geum, S. H. Shin, Minsu Park, Jae‐Hyung Jang,
Tópico(s)Semiconductor materials and devices
ResumoThe effects of nitrogen (N2) flow rate during high-temperature annealing were investigated for Ti/Al/Ni/Au ohmic metallisation on InAlN/GaN heterostructures. The samples annealed at 900°C for 100 s at a 30 SCCM N2 flow rate had the highest ohmic contact performance: a contact resistance of 0.12 Ω·mm, transfer length of 0.31 μm and specific contact resistivity of 3.42 × 10−7 Ω·cm2.
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